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GaN Technology
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GaN Technology
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GaN Epitaxy4
https://www.yltlink.com/custom_56513.html GaN Epitaxy GaN Epitaxy Most important epitaxy methods for GaN materials are MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy). GaN EPITAXY materials are commonly achieved on a non-native substrate, such as SiC, Si and Sapphire.  GaN epitaxy material qualities are greatly dependent on the BUFFER technology and the epitaxy capability of epi-house. GaN qualities are NOT ALL the SAME!
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About Us GaN Technology GaN Technology GaN Epitaxy

  • Most important epitaxy methods for GaN materials are MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy).
  • GaN EPITAXY materials are commonly achieved on a non-native substrate, such as SiC, Si and Sapphire. 
  • GaN epitaxy material qualities are greatly dependent on the BUFFER technology and the epitaxy capability of epi-house.
  • GaN qualities are NOT ALL the SAME!

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