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  • GaN on SiC

    AlGaN/GaN HEMT structure on semi-insulating SiC substrate.
    Best for superior performance RF power amplifier applications.


  • GaN on Si

    AlGaN/GaN HEMT Structure on Si Substrate.
    Suitable for both Power and RF device fabrication.


  • GaN on Sapphire

    AlGaN/GaN HEMT structure on sapphire substrate.
    Ideal material for 650V and 1200V Power device fabrication.
    Available on 4-in and 6-in substrates.


  • GaN Templates

    High crystalline quality GaN


  • Premium-Quality GaN

    World 1st GaN Epitaxy Wafer with GaN Substrate Quality

    - 2", 4", 6"
    - XRD FWHMs <= 100 arcsec
    - Atomically smooth surface, ra< 0.5 nm
    - Uniform thickness, std < 1%