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GaN on SiC
AlGaN/GaN HEMT structure on semi-insulating SiC substrate.
Best for superior performance RF power amplifier applications.
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GaN on Si
AlGaN/GaN HEMT Structure on Si Substrate.
Suitable for both Power and RF device fabrication.
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GaN on Sapphire
AlGaN/GaN HEMT structure on sapphire substrate.
Ideal material for 650V and 1200V Power device fabrication.
Available on 4-in and 6-in substrates.
others
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